A. Hoffmann, A. Willmeroth and R. Vianden Lattice defects in Rhodium and Iridium trapped at 111In probe atoms Zeitschrift für Physik, B 62 (1986) 335
E. Bodenstedt, Th. Schäfer and R. Vianden Remeasurement of the half-life of the 589 keV state of 117In and reevaluation of its g-factor Zeitschrift für Physik, A 325 (1986) 475
U. Wrede, Th. Schäfer and R. Vianden Orientation of an oxygen-induced non-axially symmetric electric field gradient at Ta in Nb Zeitschrift für Physik, B 64 (1986) 461
M.R. da Silva, A.A. Melo, J.C. Soares, M.F. da Silva and R. Vianden Lattice location of Tl and diffusion studies of Tl and Hf implanted in Magnesium Nuclear Instruments & Methods, B 15 (1986) 344
U. Hütten, R. Vianden and E.N. Kaufmann The electric field gradient and its temperature dependence at 111Cd in "-Uranium Hyp. Int. 34 (1987) 213
R. Vianden Electric field gradients in metals Hyp. Int. 35 (1987) 1079
A.F. Pasquevich and R. Vianden Temperature dependence of the hyperfine interaction of 111Cd in silicon Phys. Rev. B 35 (1987) 1560
U. Wrede, R. Schumacher and R. Vianden Orientation of the oxygen induced non-axial symmetric electric field gradient in HfTa Hyp. Int. 35 (1987) 627
M.R. da Silva, A.A. Melo, J.C. Soares, M.F. da Silva and R. Vianden Study of Gold implanted Magnesium metastable systems J. of Mat. Sci, and Eng. (1987) 90 (1987) 161
H.G. Bohn, R. Schumacher and R. Vianden Lattice occupation determination of Hf in Ni3Al by PAC Mat. Res. Soc. Symp. Proc. Vol. 81 (1987) 123
R. Schumacher and R. Vianden Influence of rare gases on cavity formation at Indium impurities in Copper Phys. Rev. B 36 (1987) 8259
R. Vianden Impurity-Defect interaction in metals in Nuclear Physics Applications on Materials Science eds. E. Recknagel and J.C. Soares NATO ASI E 144 (1987) 239
M.M. Cruz, A.A. Melo, J.C. Soares, M.F. da Silva and R. Vianden Annealing and internal oxidation of Hafnium implanted Magnesium Nuc. Instr. & Meth. B19/20 (1987) 200
A.F. Pasquevich and R. Vianden Temperature dependence of the hyperfine interaction of 111In in Germanium Phys. Rev. B 37 (1988) 10585
A. Alzner, E. Bodenstedt, B. Gemünden, J. van den Hoff, S. Piel, R. Sajok, H. Koch, Th. Schäfer and R. Vianden Gyromagnetic ratios of 4+ and 6+ states in 156Gd and 158Gd Z. Phys. A 331 (1988) 277
R. Vianden and U. Feuser Dynamics of an In impurity in the relaxed divacancy in Iridium Phys. Rev. Lett. 61 (1988) 1981
U. Feuser, R. Vianden, R. Gwilliam, C. Jeynes, B. Sealy and J.C. Soares PAC study of ternary compoand formation by ion implantation Mat. Sci. Forum 38-41 (1989) 1217
R.D. Roitzheim, H.J. Rudolph, R. Schumacher, U. Wrede and R. Vianden Trapping of Hydrogen in Vacancies at Substitutional Hafnium in Niobium Z. f. Physikalische Chemie Neue Folge 164 (1989) 999
E. Alves, M.F. da Silva, A.A. Melo, J.C. Soares, U. Feuser and R. Vianden Regrowth of Indium-implanted (100), (110) and (111) Silicon Crystals Studied with Rutherford Backscattering and Perturbed Angular Correlation Techniques Mat. Sci. and Eng. B4 (1989) 189
A. Lira-Cacho and R. Vianden Temperature dependence of the electric quadrupole interaction at Scandium impurities in Zirconium and Hafnium Hyp. Int. 60 (1990) 833
R. Vianden 73Se, an unusual PAC probe applied to the study of semiconductors Hyp. Int. 61 (1990) 1315
J.C. Correia, A.A. Melo, J.C. Soares, K. Freitag and R. Vianden Electric field gradient temperature dependence at Tantalum in different Beryllium environments Hyp. Int.
A.F. Pasquevich and R. Vianden Time-differential-perturbed-angular-correlation study of 111In/111Cd in III-V compounds Phys. Rev. B 41 (1990) 10956
R.D. Roitzheim and R. Vianden A Hydrogen-vacancy complex at substitutional Indium in Niobium Hyp. Int. 60 (1990) 821
Th. Schäfer, R. Vianden and E. Bodenstedt Remeasurement of the lifetime of the 4+1 state of 156Gd and recalculation of its g-factor Z. Phys. A 335 (1990) 387
R. Schumacher and R. Vianden Cavity formation at Indium impurities in bcc metals Hyp. Int. 60 (1990) 825
U. Feuser, R. Vianden and A.F. Pasquevich Defect - acceptor pairs in Germanium Hyp. Int. 60 (1990) 829
R.-D. Roitzheim and R. Vianden Self interstitial Trapping at Hf Impurities in Niobium Z. Phys. B, 83 (1991) 71
U. Feuser, R. Vianden, E. Alves, M.F. da Silva, E. Szilagyi, F. Paszti and J.C. Soares Vacancy - Acceptor Complexes in Germanium Produced by Ion Implantation Nuc. Instr. & Meth. B59/60 (1991) 1049
E. Alves, M.F. da Silva, J.C. Soares, J. May, V. Haslar, P. Seidl, U.Feuser and R. Vianden Epitaxial regrowth and lattice location of indium implanted in arsenic-preamorphized silicon Nuc. Instr. & Meth. B55 (1991) 580
R. Schumacher and R. Vianden Rare gases in metals - influence on the formation and nucleation of cavities Research reports in Physics: Materials Research with Ion Beams eds. H. Schmidt - Böcking, A. Schempp, K.E. Stiebing (Springer 1992)
Th. Schäfer, H. Knauf, E. Lohmann, R. Vianden and K. Freitag PAC investigation of the shallow donor environment in GaAs Nuc. Instr. & Meth., B63 (1992) 227
R. Gwilliam, B. Sealy and R. Vianden The electrical and radioactive assessment of the transmutation doping of GaAs following implantation of 111In Nuc. Instr. & Meth., B63 (1992) 106
M.O. Henry, T.B. Kehoe, M.H. Nazare, K. Freitag and R. Vianden Correlation of photoluminescence and nuclear characterization of In-implanted silicon Appl. Surface Sci. 63 (1993) 232
E. Lohmann, K. Freitag, Th. Schäfer and R. Vianden The magnetic hyperfine field at Cu in Fe, Co and Ni and the magnetic moment of the 41 keV, 2+ state of 62Cu Hyp. Int. 77 (1993) 103
R. Vianden, R. Gwilliam and B. Sealy Incorporation of In into Si preamorphized with Si, Ge and Sn Nuc. Instr. & Meth., B80/81 (1993) 644
H. Koch and R. Vianden Defect formation and defect impurity interaction in the hexagonal transition metals Re and Lu Nuc. Instr. & Meth., B80/81 (1993) 476
P. Decoster, M. Rots, J. Meersschaut, R. Vianden Hyperfine Fields and Impurity Configurations for Indium and Palladium in Nickel Z. f. Physik 91 B (1993) 445
E. Lohmann, Th. Schäfer, M. Wehner and R. Vianden Defect interaction with the double donor 77Br in GaAs and InAs Mat. Sci. Forum 143-147 (1994) 1155
B. Hauer, R. Vianden, M.F. da Silva, L. Rebouta, J.C. Soares, E. Dieguez and F. Agulló-López The lattice site of Ti in LiNbO3 J. of Phys. Cond. Matter 6 (1994) 267
S.E. Daly, M.O. Henry, K. Freitag and R. Vianden Radioactive isotopes for photoluminescence spectroscopy - 111In in Si J. of Phys. Cond. Matter 6 (1994) L643
B. Hauer, R. Vianden, J.G. Marques, N.P. Barradas, J.G. Correia, A.A. Melo, J.C. Soares, F. Agulló-López and E. Dieguez Electric field gradients at the 111In and 111mCd sites in undoped and Mg-doped LiNbO3 Phys. Rev. B51 (1995) 6208
G. Rohrlack, K. Freitag, R. Vianden, R. Gwilliam, B. Sealy, J.C. Correia and D. Forkel-Wirth Time dependent electrical properties of GaAs doped with radioactive isotopes 67Ga and 71As Nucl. Instr. & Meth. B106 (1995) 267
S.E. Daly, M.O. Henry, C.A. Frehill, K. Freitag, R. Vianden, G. Rohrlack and D. Forkel The Chemical Identification of Defect Impurities using Radioactive Implants Mat. Sci. Forum 196-201 (1995) 1497
M. Wehner, P. Friedsam, R. Vianden, S. Jahn amd D. Forkel-Wirth PAC-Investigation of the Donor-Defect Interaction in III-V Compound Semicondcutors with the Probe 77Br(77Se) Mat. Sci. Forum 196-201 (1995) 1419
Reiner Vianden (book edited by F. Agulló-López) Insulating Materials for Optoelectronics: New Developments Hyperfine Techniques for Defect Studies World Scientific, Singapore, November 1995, p 125-147
G. Marx and R. Vianden Electric Field Gradients in Si induced by uniaxial Stress Phys. Lett. A210 (1996) 364
G. Marx and R. Vianden Indium-Hydrogen Complexes in Silicon and Germanium under Compression and Tension Hyp. Int. 97/98 (1996) 211
G. Rohrlack, K. Freitag, R. Vianden, R. Gwilliam, B.-J. Sealy, Z. Jafri Recrystallisation of preamorphized silicon investigated by RBS and PAC Amorphous Silicon Technology, San Francisco, April 1996, p 313-316
S.-E. Daly, M.-O. Henry, E. Alves, J. C. Soares, R. Gwilliam, B.-J. Sealy, K. Freitag, R. Vianden, D. Stievenard Rutherford backscattering and photoluminescence studies of erbium implanted GaAs Rare Earth Doped Semiconductors II Symposium, San Francisco, April 1996, p 173-178
S. Unterricker, M. Dietrich, A. Möller, R. Vianden, M. Deicher, A. Burchard, R. Magerle, W. Pfeiffer, G. Böhm and L. Pasemann PAC-Investigation of ternary semiconductors with chalcopyrite-structure Cryst. Res. Technol. 31 (1996) 761
I. Alfter, E. Bodenstedt, W. Knichel, J. Schüth and R. Vianden g-factors of rotational states in 176Hf, 177Hf, and 180Hf Z. f. Physik A 355 (1996) 363 Zeitschrift für Physik A (Hadrons and Nuclei) (Sept. 1996) vol.355, no.4, p.363-76
M. Wehner, R. Vianden, D. Forkel-Wirth and S. Jahn Application of the PAC probe 77Br(77Se) for the study of donor-defect complexes in III-V compound semiconductors Hyp. Int. C1 (1996) 215
S. Unterricker, M. Dietrich, A. Möller, R. Vianden, M. Deicher, R. Magerle, A. Burchard and W. Pfeiffer Quadrupole Interaction in chalcopyrite-structure Semicondcutors Hyp. Int. C1 (1996) 238
A. Möller, R. Vianden, S. Unterricker, M. Dietrich and D. Forkel-Wirth TDPAC Investigations of the Electric Field Gradient with 77Br in Ternary Semiconductors Hyp. Int. C1 (1996) 246
M.-C. Ridgway, A.-P. Byrne, E. Bezakova, M. Wehner, R. Vianden Characterisation of residual disorder in Sn-implanted InP with perturbed angular correlation Conference on Optoelectronic and Microelectronic Materials and Devices, Canberra, Australia, Dec 1996 IEEE, p 146-149
J.G. Correia, J.G. Marques, J.C. Soares, A. Alves, M.F. da Silva, K. Freitag, R. Vianden and the ISOLDE Collaboration Radiation damage annealing of Hg implanted InP Nuclear Instruments and Methods in Physics Research Section B, EMRS Straßburg Spring, pp. 244-247(4), Dec 1996
G. Rohrlack, K. Freitag, Ch. von Nathusius, R. Vianden, R. Gwilliam and B.J. Sealy Hall effect measurements on transmutation doped semiconductors Material Science Forum, Volume 248-249, p 119-124, 1997
DOI Link: 10.4028/www.scientific.net/MSF.248-249.119
M. Dietrich, A. Burchard, D. Degering, M. Deicher, J. Kortus, R. Magerle, A. Möller, V. Samokhvalov, S. Unterricker, R. Vianden, and the ISOLDE-Collaboration Quadrupole Interaction in Ternary Chalcopyrite Semiconductors: Experiments and Theory Zeitschrift für Naturforschung A, Volume 55a, pp. 256-260, 2000
K. Lorenz, R. Vianden, R. Birkhahn, A. J. Steckl, M. F. da Silva, J. C. Soares and E. Alves RBS/Channeling study of Er doped GaN films grown by MBE on Si(111) substrates Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Volume 161-163, pp. 946-951, March 2000
DOI Link: 10.1016/S0168-583X(99)00683-7
K. Lorenz, R. Vianden, S.J. Pearton, Cammy R. Abernathy and J.M. Zavada Defect Trapping and Annealing for Transition Metal Implants in Group III Nitrides The Materials Research Society - Internet Journal - Nitride Semiconductor Research, Volume 5, Article 5, 22 May 2000
Christoph von Nathusius and Reiner Vianden Hall effect measurements on transmutation doped semiconductors Hyperfine Interactions, Springer Netherlands, Volume 129, Numbers 1-4, December 2000, Pages 391-400
DOI Link: 10.1023/A:1012686522168
E. Alves, T. Monteiro, J. Soares, L. Santos, M. F. da Silva, J. C. Soares, W. Lojkowski, D. Kolesnikov, R. Vianden and J. G. Correia High temperature annealing of Er implanted GaN Materials Science and Engineering B, Volume 81, Issue Number 1-3, pp. 132-135, 24 April 2001
DOI Link: 10.1016/S0921-5107(00)00690-5
D. Wruck, K. Lorenz, R. Vianden, B. Reinhold, H.-E. Mahnke, J. M. Baranowski, K. Pakula, L. Parthier and F. Henneberger Extended x-ray absorption fine structure and photoluminescence study of Er-implanted GaN films Semiconductor Science and Technology, Volume 11, Issue Number 11, pp. L77-L80, 27 September 2001
DOI Link: 10.1088/0268-1242/16/11/101
Jörn Bartels, Katharina Lorenz, Florian Ruske, Genene Tessema and Reiner Vianden Dopants in Semiconductors Studied by Perturbed Angular Correlation Acta Physica Polonica, Volume 100, pp. 585-602, November 2001
Link: http://przyrbwn.icm.edu.pl/APP/ABSTR/100/a100-5-585.html
Katharina Lorenz, Florian Ruske and Reiner Vianden Reversible changes in the lattice site structure for In implanted into GaN Physica Status Solidi (B), Volume 228, Issue Number 1, pp. 331-335, 5 November 2001
DOI Link: 10.1002/1521-3951(200111)228:1<331::AID-PSSB331>3.0.CO;2-6
T. Monteiro, C. Boemare, M. J. Soares, R. A. Sá Ferreira, L. D. Carlos, K. Lorenz, R. Vianden and E. Alves Photoluminescence and lattice location of Eu and Pr implanted GaN samples Physica B: Condensed Matter, Volume 308-310, pp. 22-25, December 2001
DOI Link: 10.1016/S0921-4526(01)00656-1
E. Alves, J. G. Marques, M. F. Da Silva, J. C. Soares, J. Bartels and R. Vianden Heavy ion implantation in GaN epilayers Radiation Effects and Defects in Solids, Volume 156, Issue Number 1-4, pp. 267-272, 4 December 2001
DOI Link: 10.1080/10420150108216904
E. Alves, K. Lorenz, R. Vianden, C. Boemare, M. J. Soares and T. Montiero Optical doping of nitrides by ion implantation Modern Physics Letters B, Volume 15, Numbers 28-29, pp. 1281-1287, 20 December 2001
DOI Link: 10.1142/S0217984901003172
Katharina Lorenz, Florian Ruske and Reiner Vianden Reversible changes in the lattice site structure for In implanted into GaN Applied Physics Letters, Volume 80, Issue Number 24, p. 4531-4533, June 2002
DOI Link: 10.1063/1.1485117
Jörn Bartels, Reiner Vianden and M. C. Ridgway Impurity gettering by cavities in Si investigated with the PAC technique Nuclear Instruments and Methods in Physics Research Section B, Volume 190, Issue 1-4, pp. 846-850, 2002
DOI Link: 10.1016/S0168-583X(01)01220-4
P. Friedsam and R. Vianden Short-range order in ZrBaF glasses studied with γ-γ perturbed angular correlation Journal of Non-Crystalline Solids, Volume 298, Issue 1, pp. 1-6, February 2002
DOI Link: 10.1016/S0022-3093(01)01046-8
Genene Tessema and Reiner Vianden Indium-carbon pairs in Germanium Journal of Physics: Condensed Matter, Volume 15, Issue 30, pp. 5297-5306, 2003
DOI Link: 10.1088/0953-8984/15/30/311
Genene Tessema and Reiner Vianden Formation and properties of In-Te pairs in Si Physica B: Physics of Condensed Matter, Volume 340, pp. 613-616, 2003
DOI Link: 10.1016/S0921-4526(03)00769-5
F. Albrecht, G. Pasold, J. Grillenberger, N. Achtziger, W. Witthuhn, M. Risse, R. Vianden, M. Dietrich, and The ISOLDE Collaboration Identification of a Br-correlated bandgap state in GaAs by radiotracer spectroscopy Applied Physics Letters, Volume 83, Issue 21, pp. 4333-4335, 2003
DOI Link: 10.1063/1.1629370
K. Lorenz, E. Alves, U. Wahl, T. Monteiro, S. Dalmasso, R.-W. Martin, K.P. O Donnell, and R. Vianden Implantation and annealing studies of Tm implanted GaN Materials Science and Engineering B, Volume 105, Number 1-3, pp. 97-100, 2003
DOI Link: 10.1016/j.mseb.2003.08.023
U. Wahl, E. Alves, K. Lorenz, J.-G. Correia, T. Monteiro, B. De Vries, A. Vantomme, and R. Vianden Lattice location and optical activation of rare earth implanted GaN Materials Science and Engineering B, Volume 105, Number 1-3, pp. 132-140, 2003
DOI Link: 10.1016/j.mseb.2003.08.031
D. A. Brett, R. Dogra, A. P. Byrne, M. C. Ridgway, J. Bartels and R. Vianden Local Structure of Implicated Pd in Si Using PAC Hyperfine Interactions (2004), Volume 158, Numbers 1-4, p 299-303, Springer 2005
DOI Link: 10.1007/s10751-005-9048-9
Jakob Penner and Reiner Vianden Temperature Dependence of the Quadrupole Interaction for 111In in Sapphire Hyperfine Interactions (2004), Volume 158, Numbers 1-4, p 389-394, Springer 2005
DOI Link: 10.1007/s10751-005-9064-9
Katharina Lorenz and Reiner Vianden Anomalous Temperature Dependence of the EFG in AlN Measured with the PAC-Probes 181Hf and 111In Hyperfine Interactions (2004), Volume 158, Numbers 1-4, p 273-279, Springer 2005
DOI Link: 10.1007/s10751-005-9044-0
Ronan Nédélec, Reiner Vianden and The ISOLDE Collaboration The Rare Earth PAC probe 172Lu in wide band-gap semiconductors Hyperfine Interactions (2004), Volume 158, Numbers 1-4, p 281-284, Springer 2005
DOI Link: 10.1007/s10751-005-9045-z
Genene Tessema and Reiner Vianden The study of the interaction of indium with tellurium in silicon Applied Physics A: Materials Science and Processing (2005), Volume 81, Number 7, pp 1471-1476, November 2005
DOI Link: 10.1007/s00339-005-3249-6
Ronan Nédélec, Reiner Vianden, ISOLDE Collaboration Temperature dependent PAC studies with the rare earth 172Lu in ZnO Journal of Optical Materials (2006), Volume 28, p 723
DOI Link: 10.1016/j.optmat.2005.09.065
Nicole Santen and Reiner Vianden Doped silicon under uniaxial tensile strain investigated by PAC Journal of Materials Science: Materials and Electronics (2007), Volume 18, Number 7, pp 715-719
DOI Link: 10.1007/s10854-006-9095-2
Nicole Santen and Reiner Vianden Phosphorus-doped silicon under uniaxial tensile strain investigated by PAC Hyperfine Interactions (2007), Volume 177, Pages 21-25, June 2007
DOI Link: 10.1007/s10751-008-9616-x
Ronan Nédélec, Reiner Vianden, ISOLDE Collaboration The temperature dependence of the EFG for 172Lu(172Yb) in GaN Hyperfine Interactions (2007), Volume 178, Numbers 1-3, Pages 19-22, July 2007
DOI Link: 10.1007/s10751-008-9650-8
Matthias Haaks, Riccardo Valentini and Reiner Vianden First test of LSO scintillators for Positron Lifetime Spectroscopy Physica Status Solidi (C) WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, Volume 4, Issue 10, Pages 4036 - 4039, 29 August 2007
DOI Link: 10.1002/pssc.200675869
M. Rasulbaev, K. Maier, R. Vianden, T. Thümmler, B. Ostrick and Ch. Weinheimer Production of 83Rb for the KATRIN experiment Applied Radiation and Isotopes, Volume 66, Issue 12, Pages 1838– 1843, 25 April 2008<
DOI Link: 10.1016/j.apradiso.2008.04.020
Katharina Lorenz, Thomas Geruschke, Eduardo Alves and Reiner Vianden Temperature dependence of the electric field gradient in GaN measured with the PAC-probe 181Hf Hyperfine Interactions (2007), Volume 177, Numbers 1-3, Pages 89-95, 6 August 2008
DOI Link: 10.1007/s10751-008-9708-7
Nicole Santen and Reiner Vianden Effects of doping on the elastic properties of silicon Materials Science and Engineering B, Volumes 154-155, Pages 126-128, 5 December 2008
DOI Link: 10.1016/j.mseb.2008.08.020
Ronan Nédélec and Reiner Vianden On the effective anisotropy of the 91-1,049 keV γγ-cascade in 172Yb Hyperfine Interactions (2009), Volume 192, Pages 109-115, February 2009
DOI Link: 10.1007/s10751-009-9906-y
Thomas Geruschke, Katharina Lorenz, Eduardo Alves and Reiner Vianden Lattice location and annealing studies of Hf implanted CaF2 Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Volume 267, Issues 8-9, Pages 1472-1475, 1 May 2009
DOI Link: 10.1016/j.nimb.2009.01.151
Nicole Santen and Reiner Vianden Effects of group-V impurities on the elastic properties of silicon Physica B: Condensed Matter, 29 August 2009
DOI Link: 10.1016/j.physb.2009.08.140
Thomas Geruschke, Katharina Lorenz and Reiner Vianden Alloy and lattice disorder in Hf implanted AlxGa1-xN (0≤x≤1) Physica B: Condensed Matter, 2 September 2009
DOI Link: 10.1016/j.physb.2009.08.253
Th. Geruschke, P. Keßler, H. Timmers, A. P. Byrne, R. Vianden 100Pd/Rh perturbed angular correlation measurements in GaN/ZnO - a step towards spintronics? 16th AINSE Conference on Nuclear and Complementary Techniques of Analysis - 25 - 27 November 2009 at Lucas Heights, Sydney
Published online: 16th AINSE Conference Publication
W. Kemp, P. Keßler, W.-D. Zeitz, A.P. Byrne, M.C. Ridgway, H. Timmers Time-differential perturbed angular correlation spectroscopy with 111In/Cd and 100Pd/Rh probes using two new Australian instruments 16th AINSE Conference on Nuclear and Complementary Techniques of Analysis - 25 - 27 November 2009 at Lucas Heights, Sydney
Published online: 16th AINSE Conference Publication
J. Schmitz, J. Niederhausen, J. Penner, K. Lorenz, E. Alves and R. Vianden Stable In-defect complexes in GaN and AlN Physica B: Condensed Matter, Volume 404, Issues 23-24, 15 December 2009, Pages 4866-4869
DOI Link: 10.1016/j.physb.2009.08.181
Jacob A. Warner, Laura G. Gladkis, Thomas Geruschke, Reiner Vianden, Paul N. Smith, Jennifer M. Scarvell, Wolf-Dietrich Zeitz and Heiko Timmers Tracing wear debris pathways via ion-implanted indium-111 Wear, Volume 268, Issues 11-12, Pages 1257-1265, 12 May 2010
DOI Link: 10.1016/j.wear.2010.01.021
Heiko Timmers, Laura G. Gladkis, Jacob A. Warner, Aidan P. Byrne, Mariela F. del Grosso, Claudia R. Arbeitman, Gerardo Garcia-Bermudez, Thomas Geruschke and Reiner Vianden Polymer tribology by combining ion-implantation and radionuclide tracing Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Volume 268, Issues 11-12, June 2010, Pages 2119-2123
DOI Link: 10.1016/j.nimb.2010.02.019
Riccardo Valentini and Reiner Vianden PAC studies with LSO scintillation crystals Nuclear Instruments and Methods in Physics Research Section A, Volume 623, Number 3, Pages 1002-1008, 5 August 2010
DOI Link: 10.1016/j.nima.2010.07.084
P. Keßler, K. Müller, T. Geruschke, H. Timmers, A. P. Byrne and R. Vianden Search for ferromagnetic ordering in Pd doped wide band gap semiconductors GaN and ZnO Hyperfine Interactions (2010), Published online, 04 November 2010
DOI Link: 10.1007/s10751-010-0189-0
Michael Steffens, Jakob Penner, Hassan Kamleh und Reiner Vianden Temperature dependence of the hyperfine fields of 111In in sapphire (Al2O3) single crystals Hyperfine Interactions (2010), Volume 197, Issue 1 , Pages 167-171, 16 November 2010
DOI Link: 10.1007/s10751-010-0190-7
Riccardo Valentini, Reiner Vianden and ISOLDE Collaboration Angular correlation studies on 172Lu(172Yb) in GaN and measurements at low temperatures Hyperfine Interactions (2010), Volume 197, Issue 1 , Pages 149-153, 18 November 2010
DOI Link: 10.1007/s10751-010-0229-9
P. Keßler, K. Lorenz, S.M.C. Miranda, J.G. Correia, K. Johnston, R. Vianden and the Isolde Collaboration An In-defect complex as a possible explanation for high luminous efficacy of InGaN and AlInN based devices Hyperfine Interactions (2010), Published online, 23 November 2010
DOI Link: 10.1007/s10751-010-0200-9
H. Timmers, W. Kemp, A. Byrne, M. Ridgway, R. Vianden, P. Keßler and M. Steffens Evidence of palladium-defect pairing in intrinsic germanium Hyperfine Interactions (2010), Volume 197, Issue 1 , Pages 159-165, 26 November 2010
DOI Link: 10.1007/s10751-010-0206-3
S. M. C. Miranda, M. Peres, T. Monteiro, E. Alves, H. D. Sun, T. Geruschke, R. Vianden and K. Lorenz Rapid thermal annealing of rare earth implanted ZnO epitaxial layers Optical Materials, Proceedings of the EMRS Spring meeting 2010 Symposium K, Article in press
DOI Link: 10.1016/j.optmat.2010.10.009
Patrick Keßler, Katharina Lorenz and Reiner Vianden Implanted Impurities in Wide Band Gap Semiconductors Defect and Diffusion Forum, Volume 311 (Defects and Diffusion Studied Using PAC Spectroscopy), Pages 167-179, March 2011
DOI Link: 10.4028/www.scientific.net/DDF.311.167