The formation of shallow p-type layers in InP has been previously achieved by Hg implantation. In this work, for the first time, microscopic information of the near surrounding of the Hg dopant and the recovery of the damaged layer is derived combining RBS and hyperfine interactions studies. It is shown that most of the radiation damage created by the implantation can be recovered with a two step furnace annealing at 400°C and 800°C using a proximity cap.