Dopants in Semiconductors Studied by Perturbed Angular Correlation

Jörn Bartels, Katharina Lorenz, Florian Ruske, Genene Tessema and Reiner Vianden

Acta Physica Polonica, Volume 100, pp. 585-602, November 2001

PACS Numbers: 61.72.Vv, 61.72.Tt, 81.40.Ef, 76.80.+y

Abstract:

The γ-γ perturbed angular correlation technique is a very powerful tool for the investigation of dopant incorporation and damage recovery after implantation in semiconductors. The basic principles of the technique will be introduced followed by a discussion of its strengths and limitations. Examples of its application will be given, ranging from cavities in silicon, effects of uniaxial stress on acceptor-donor pairs in silicon to damage recovery in nitride semiconductors like GaN.