M. Wehner, P. Friedsam, R. Vianden, S. Jahn, D. Forkel-Wirth PAC investigations of the donor-defect interaction in III-V compound semiconductors with the probe 77Br(77Se)
A. Möller, R. Vianden, S. Unterricker, M. Dietrich and D. Forkel-Wirth PAC-investigations of the electric field gradient with 77Br and 111mCd in ternary semiconductors
G. Rohrlack, K. Freitag, R. Vianden, R. Gwilliam, B.J. Sealy, J.G. Correia, D. Forkel-Wirth Time dependent electrical properties of GaAs doped with radioactive isotopes 67Ga and 71As
Ch. v. Nathusius, G. Rohrlack, K. Freitag, R. Vianden, R.Gwilliam, B.J. Sealy Time dependent electrical properties of GaAs doped with the radioactive isotopes 125I and 71As
M. Wehner, K. Freitag and R. Vianden, M. Dalmer, M. Restle, C. Ronning and H. Hofsäss PAC measurements and lattice site location of Br in GaAs
P. Friedsam, M. Forker, Ch. Schön, R. Vianden Investigations of electric-field-gradients in amorphous and crystalline SiO2-structures
M. Wehner, R. Vianden, K. Freitag, M. Dalmer, H. Hofsäss, M. C. Ridgway, M. Petravic and the ISOLDE-Collaboration Investigations of the donor-defect interaction of Bromine in III-V compound semiconductors
P. Friedsam, M. Forker, H. Schneidera, C. Taakea, R. Vianden PAC-Investigation of electric field gradients in amorphous Hf-Mullitprecursors
C. v. Nathusius, R. Vianden Time dependent electrical properties of InP doped with the radioactive 111In
Monika Risse and Reiner Vianden Radioactive Probes in Semiconductors 77Br(77Se) in InAs − a DX-like defect
Jörn Bartels and Reiner Vianden Radioactive Probes in Semiconductors Investigation of Cavities in Silicon with the PAC Technique
K. Lorenz, R. Vianden, K. Freitag, J. Pearton, K. Abernathy, J. Zavada Radioactive Probes in Semiconductors Investigations on the Annealing Behaviour of Group III Nitrides after Ion Implantation
Genene Tessema and Reiner Vianden Radioactive Probes in Semiconductors In−Donor Pairs in Si under Uniaxial Stress
Tanja Dessauvagie and Reiner Vianden Radioactive Probes in Semiconductors PAC Spectra for Simulated Defect Distributions in Cubic Single Crystals