Annual Report 1997
Report 4 / 4



Amorphisation of III-V semiconductors by implantation

P. Friedsam, M. Forker, K. Freitag and R. Vianden

Helmholtz-Institut für Strahlen- und Kernphysik, Universität Bonn

Supported by the DFG: SFB 408

Contents:

The structure of amorphous solids is investigated in the framework of the SFB408. It has been found, that PAC spectra observed after the implantation of a probe nucleus into semiconductors greatly resemble such spectra in amorphous solids. In order to get deeper insight into the relation between disorder in the probe vicinity and the PAC spectra Monte-Carlo simulations of uncorrelated damage in semiconductors have been carried out. It could be shown that such simulated spectra cannot be described with classical frequency distribution functions (Gaussian or Lorentzian). Experiments using 111In implanted into several III-V semiconductors show the influence of the relation of the lattice constitutions and a remaining correlation of the resulting PAC function with the crystal orientation.