Helmholtz - Institut für Strahlen- und Kernphysik
Nußallee 14-16
53115 Bonn
Tel: +49-228-732247
Fax: +49-228-732505
E-Mail:
Diplomarbeit − 2006
PAC-Untersuchungen von dotiertem Silizium unter uniaxialer Zugspannung
Doktorarbeit − 2010
Dotierungsabhängigkeit des elastischen Verhaltens von Silizium
Publikationen
Nicole Santen and Reiner Vianden Doped silicon under uniaxial tensile strain investigated by PAC Journal of Materials Science: Materials and Electronics (2007), Volume 18, Number 7, pp 715-719
DOI Link: 10.1007/s10854-006-9095-2
Nicole Santen and Reiner Vianden Phosphorus-doped silicon under uniaxial tensile strain investigated by PAC Hyperfine Interactions (2007), Volume 177, Pages 21-25, June 2007
DOI Link: 10.1007/s10751-008-9616-x
Nicole Santen and Reiner Vianden Effects of doping on the elastic properties of silicon Materials Science and Engineering B, Volumes 154-155, Pages 126-128, 5 December 2008
DOI Link: 10.1016/j.mseb.2008.08.020
Nicole Santen and Reiner Vianden Effects of group-V impurities on the elastic properties of silicon Physica B: Condensed Matter, 29 August 2009
DOI Link: 10.1016/j.physb.2009.08.140