Annual Reports

1994 1995 1996 1997 1999 2001

1994

  1. M. Wehner, P. Friedsam, R. Vianden, S. Jahn, D. Forkel-Wirth
    PAC investigations of the donor-defect interaction in III-V compound semiconductors with the probe 77Br(77Se)
  2. A. Möller, R. Vianden, S. Unterricker, M. Dietrich and D. Forkel-Wirth
    PAC-investigations of the electric field gradient with 77Br and 111mCd in ternary semiconductors
  3. G. Rohrlack, K. Freitag, R. Vianden, R. Gwilliam, B.J. Sealy, J.G. Correia, D. Forkel-Wirth
    Time dependent electrical properties of GaAs doped with radioactive isotopes 67Ga and 71As
[TOP]

1995

  1. Ch. v. Nathusius, G. Rohrlack, K. Freitag, R. Vianden, R.Gwilliam, B.J. Sealy
    Time dependent electrical properties of GaAs doped with the radioactive isotopes 125I and 71As
  2. M. Wehner, K. Freitag and R. Vianden, M. Dalmer, M. Restle, C. Ronning and H. Hofsäss
    PAC measurements and lattice site location of Br in GaAs
  3. P. Friedsam, M. Forker, Ch. Schön, R. Vianden
    Investigations of electric-field-gradients in amorphous and crystalline SiO2-structures
[TOP]

1996

  1. M. Wehner, R. Vianden, K. Freitag, M. Dalmer, H. Hofsäss, M. C. Ridgway, M. Petravic and the ISOLDE-Collaboration
    Investigations of the donor-defect interaction of Bromine in III-V compound semiconductors
  2. P. Friedsam, M. Forker, H. Schneidera, C. Taakea, R. Vianden
    PAC-Investigation of electric field gradients in amorphous Hf-Mullitprecursors
  3. C. v. Nathusius, R. Vianden
    Time dependent electrical properties of InP doped with the radioactive 111In
[TOP]

1997

  1. J. Bartels, C. Noll, R. Vianden
    Investigation of Cavities in Silicon with the PAC-atom 111In
  2. M. Risse, R. Vianden, M. Wehner
    Investigations of the donor-defect interaction of Bromine in the III-V compound semiconductor InAs
  3. C. v. Nathusius, R. Vianden
    Time dependent electrical properties of GaN doped with the radioactive isotope 111In
  4. P. Friedsam, M. Forker, K. Freitag and R. Vianden
    Amorphisation of III-V semiconductors by implantation
[TOP]

1999

  1. Monika Risse and Reiner Vianden
    Radioactive Probes in Semiconductors — 77Br(77Se) in InAs − a DX-like defect
  2. Jörn Bartels and Reiner Vianden
    Radioactive Probes in Semiconductors — Investigation of Cavities in Silicon with the PAC Technique
  3. K. Lorenz, R. Vianden, K. Freitag, J. Pearton, K. Abernathy, J. Zavada
    Radioactive Probes in Semiconductors — Investigations on the Annealing Behaviour of Group III Nitrides after Ion Implantation
  4. Genene Tessema and Reiner Vianden
    Radioactive Probes in Semiconductors — In−Donor Pairs in Si under Uniaxial Stress
  5. Tanja Dessauvagie and Reiner Vianden
    Radioactive Probes in Semiconductors — PAC Spectra for Simulated Defect Distributions in Cubic Single Crystals
[TOP]

2001

  1. Katharina Lorenz, Florian Ruske and Reiner Vianden
    Radioactive Probes in Semiconductors — Investigations on Ion Implantation into Group III Nitrides
  2. Genene Tessema and Reiner Vianden
    Radioactive Probes in Semiconductors — Indium-Impurity Pairs in Silicon and Germanium under Uniaxial Stress
  3. T. Dessauvagie, R. Vianden, A. Byrne, M. Ridgway
    Radioactive Probes in Semiconductors — Temperature dependent PAC measurements of 111In in predoped
  4. Ronan Nédélec, Karl Maier and Reiner Vianden
    Radioactive Probes in Semiconductors — PAC Measurements with 48Cr(48V) after Recoil Implantation
[TOP]

Last Update: 06.10.2006, Riccardo Valentini